SAED pattern from LaCoO3 (Image 1)
SAED pattern from LaCoO3 recorded with Orius SC200D CCD camera
Methods
camera length of 600 mm
exposure time of 10 s
spot size #4 at 200 kV
HREM image of active catalytic nanoparticle of ceria zirconia
Image courtesy of Ruigang Wang and Peter Crozier, Center for Solid State Science, School of Materials, Arizona State University, USA.
HREM image of active catalytic nanoparticle of ceria zirconia recorded with Orius SC600 camera in an environmental TEM operating at 200 kV. Cerium atomic columns appear as black dots in the image.
High resolution image of Au nanoparticles, drift correction off (image 1)
Image of gold (Au) nanoparticles shows the impact sample motion may have on an image when drift correction is turned off. See High-resolution image of Au nanoparticles, drift correction on (image 2 and 3) in the OneView media library to see how OneView minimizes the impact of sample motion when drift correction is turned on.
TEM magnification: 255kx; electron energy: 200 keV; exposure time: 2.56 s; drift correction: off
High resolution image of Au nanoparticles, drift correction on (image 2)
Image of gold (Au) nanoparticles shows how OneView minimizes the impact of sample motion when drift correction is turned on. See High-resolution image of Au nanoparticles, drift correction on (image 1) in the OneView media library to see motion of the original sample when drift correction is turned off.
TEM magnification: 255kx; electron energy: 200 keV; exposure time: 2.56 s; drift correction: on
High resolution image of Au nanoparticles, drift correction on (image 3)
Image of gold (Au) nanoparticles shows how OneView minimizes the impact of sample motion when drift correction is turned on. See High-resolution image of Au nanoparticles, drift correction on (image 1) in the OneView media library to see motion of the original sample when drift correction is turned off.
TEM magnification: 255kx; electron energy: 200 keV; exposure time: 2.56 s; drift correction: on
[110] CBED pattern of GaN/InGaN
OneView camera is able to synchronize frames for 4D STEM applications. Image is related to [110] high resolution image of GaN/InGaN image in the OneView media library.
Camera length: 550 mm; electron energy: 200 keV; exposure time: 5 s; pattern is displayed on linear scale
[110] CBED pattern of GaN/InGaN
OneView camera is able to synchronize frames for 4D STEM applications. Image is related to [110] high resolution image of GaN/InGaN image in the OneView media library.
Camera length: 550 mm; electron energy: 200 keV; exposure time: 5 s; pattern is displayed on logarithm scale
[110] high resolution image of GaN/InGaN
High-resolution lattice structure is clearly imaged using OneView camera. Image is related to Nanobeam diffraction of GaN/InGaN video and [110] CBED pattern of GaN/InGaN images in the OneView media library.
TEM magnification: 530kx; electron energy: 200 keV; exposure time: 0.16 s; drift correction: on
K2 Summit camera and Quantum energy filter highlight the many forms of the MAC array also known as the bacterial death star
Metamorphosis-associated contractile (MAC) structures show a surprising variety of uses in bacteria. Shown above is one particular structure which has been identified to be used in bacterial warfare. Data was collected using a GIF Quantum® energy filter with a K2 Summit® camera and is described by Shikuma et. al., in a recent issue of science.
Scale bar: 100 nm
GIF Quantum LS imaging filter
Maximize your resolution and contrast for low dose imaging applications, including cryo-EM and cryo-electron tomography.
Pages
![[110] CBED pattern of GaN/InGaN](https://www.gatan.com/sites/default/files/CBED-3-5-sec-spot-8-cl-550mm-081914-%28good%29-central-2k.png "[110] CBED pattern of GaN/InGaN")
![[110] CBED pattern of GaN/InGaN](https://www.gatan.com/sites/default/files/CBED-3-5-sec-spot-8-cl-550mm-081914-%28good%29-log-scale.png "[110] CBED pattern of GaN/InGaN")
![[110] high resolution image of GaN/InGaN](https://www.gatan.com/sites/default/files/GaN-InGaN.png "[110] high resolution image of GaN/InGaN")
