Fast atomic EELS analysis across the GaN/AlGaN interface
Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of Dr. Giuseppe Nicotra at IMM-CNR, Catania, Italy Microscope courtesy of Dr. Giuseppe Nicotra at IMM-CNR, Catania, Italy

Fast atomic EELS analysis across the GaN/AlGaN interface

Methods

probe-corrected ARM 200F TEM/STEM microscope
C-FEG emission gun
GIF Quantum® ER system
voltage: 200 kV
data taken in STEM mode
EELS core-loss spectrum (200 – 2200 eV) exposure time: 10 ms
beam current: 45 pA
dataset size: 250 x 250 pixels
total exposure time: 11 min