Fast DualEELS color map of a III-V transistor device structure before gate metallization process
Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of University of Glasgow Microscopecourtesy of Professor Gerald Kothleitner, TU-Graz, Austria

Fast DualEELS color map of a III-V transistor device structure before gate metallization process

Methods

Probe-corrected FEI Titan TEM/STEM microscope; X-FEG emission gun; GIF Quantum® ERS system; voltage: 300 kV; STEM mode; EELS low core-Loss spectrum (200 – 2200 eV): 3.3 ms; EELS low core-loss spectrum (700 – 2700 eV): 3.3 ms; dataset size: 397 x 190 pixels; beam current: 200 pA